Dresden 2009 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 10: Surface Modification
DS 10.4: Vortrag
Dienstag, 24. März 2009, 11:45–12:00, GER 37
Influence of the ion distribution on shape and damage in Xe-induced ripple formation on Si — •Andreas Biermanns1, Ullrich Pietsch1, Antje Hanisch2, Jörg Grenzer2, Stefan Facsko2, and Hartmut Metzger3 — 1Universität Siegen, Germany — 2Foschungszentrum Dresden-Rossendorf, Germany — 3ID01 beamline, ESRF, France
In recent years, the creation of surface-nanostructures due to ion-beam sputtering has gained much interest due to the possibility to pattern large surface areas with tunable morphologies in a short time. One kind of those nanostructures are wave-like patterns (ripples) produced by an interplay between a roughening process caused by ion beam erosion (sputtering) of the surface and smoothening processes caused by surface diffusion. For the creation of such ripple patterns with medium energy ions, the ion beam has to be inclined with respect to the surface normal of the target by an angle between 60∘ and 80∘. In this presentation we show that the resulting inhomogeneity within the irradiated sample area is essential for the ripple formation. We report on investigations of the ion distribution on ripple formation on Si (001) surfaces after irradiation with medium-energy Xe+-ions. We studied the change of average surface morphology and the damage imposed to the crystal by means of grazing-incidence - small angle scattering (GISAXS) and diffraction (GID) using synchrotron-radiation. We show that changing the asymmetry of the ion distribution changes both morphology and degree of damage of the crystalline material.