DS 10: Surface Modification
Dienstag, 24. März 2009, 11:00–12:45, GER 37
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11:00 |
DS 10.1 |
Interface modification by fluorinated aromatic SAMs — •Christian Schmidt and Gregor Witte
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11:15 |
DS 10.2 |
Fundamentals of surfactant sputtering — •Hans Hofsäss and Kun Zhang
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11:30 |
DS 10.3 |
Importance of internal ionbeam parameters on the self-organized pattern formation withlow-energy broad beam ion sources — •Marina Cornejo, Bashkim Ziberi, Michael Tartz, Horst Neumann, Frank Frost, and Bernd Rauschenbach
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11:45 |
DS 10.4 |
Influence of the ion distribution on shape and damage in Xe-induced ripple formation on Si — •Andreas Biermanns, Ullrich Pietsch, Antje Hanisch, Jörg Grenzer, Stefan Facsko, and Hartmut Metzger
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12:00 |
DS 10.5 |
Xe+ ion beam induced rippled structures on Si miscut wafers — •Antje Hanisch, Jörg Grenzer, Andreas Biermanns, and Ullrich Pietsch
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12:15 |
DS 10.6 |
Mechanisms in low-energy ion beam erosion of fused silica surfaces — •Jens Völlner, Bashkim Ziberi, Frank Frost, and Bernd Rauschenbach
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12:30 |
DS 10.7 |
Development strategy of new liquid metal and alloy ion sources for focussed ion beam technology — •Kirill Trunov, Paul Mazarov, Alexander Melnikov, Rüdiger Schott, and Andreas D. Wieck
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