Dresden 2009 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 11: Layer Growth: Evolution of Structure and Simulation

DS 11.6: Vortrag

Dienstag, 24. März 2009, 15:15–15:30, GER 37

In-situ investigations of the atomic layer deposition of HfO₂ with UHV/AFM — •Krzysztof Kolanek, Konstantin Karavaev, Massimo Tallarida, and Dieter Schmeisser — Brandenburgische Technische Universität, LS Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee, 17, 03046, Cottbus, Germany

We studied in-situ the atomic layer deposition (ALD) of HfO₂ with ultra high vacuum (UHV) atomic force microscope (AFM), using the ALD reactor developed by our group [1, 2]. The reactor was attached to the Omicron Large Sample-UHV/AFM system in the AFM-Lab of the Angewandte Physik-Sensorik chair at the BTU-Cottbus. We investigated different Si(001)/SiO₂ substrates and surface preparation techniques performed before the ALD process. After each ALD cycle (using TDMAHf and H₂O as precursors), we studied the influence of the HfO₂ growth on the root mean square (RMS) roughness; the surface fractal dimension and the height histogram: the surface skewness and kurtosis. We focused on the influence of the substrate temperature on the surface topography during the ALD. The in-situ studies of the ALD process with the UHV/AFM system correlated with the experiments performed with photoelectron spectroscopy can be used for understanding the fundamental properties of the ALD of HfO₂ on Si(001).
[1] M. Tallarida, K. Karavaev, and D. Schmeisser, J. Appl. Phys. 104, 064116 (2008); [2] M. Tallarida, K. Karavaev, and D. Schmeisser, J. Vac. Sci. Technol. B, accepted for publication.