Dresden 2009 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 13: Thin Film Metrology for Electronics, Photonics, and Photovoltaics I
DS 13.3: Vortrag
Dienstag, 24. März 2009, 11:15–11:30, GER 38
Strain analysis of embedded SiGe structures by Raman spectroscopy and FEM modelling — •Marek Roelke1, Michael Hecker1, Yvonne Ritz1, Ehrenfried Zschech1, and Victor Vartanian2 — 1AMD Fab 36 LLC & Co. KG Dresden, Wilschdorfer Landstraße 101, D-01109 Dresden, Germany — 2International Sematech Manufacturing Initiative (ISMI), 2706 Montopolis Drive, Austin, TX 78741-6499 University of Technology
Strained silicon below the transistor gate increases significantly the charge carrier mobility thus improving the performance of present leading-edge CMOS devices. For better understanding of structure-strain relationship at the nanoscale and for the development of improved device structures, measurement of the strain state has become essential. To enable the characterization of structures close to the production process the applied measurement technique has to be fast, with low preparation-induced impact onto the sample surface, and sensitive to local strain in silicon thin film structures. Raman spectroscopy meets these requirements very well. Thus it is used in the present investigation to analyze the strain distribution in and close to embedded SiGe structures in silicon wafers in conjunction with finite element (FE) analysis. After verifying our model by comparing experimental to theoretical outcomes we show how the stress state in both SiGe and Si regions is modified when scaling down the geometric dimensions. Analysis shows that the stress state in the strained Si-channel is very sensitive to the geometry of the surrounding materials as well as the proportion of Germanium in the SiGe regions.