Dresden 2009 – scientific programme

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DS: Fachverband Dünne Schichten

DS 15: Thin Film Metrology for Electronics, Photonics, and Photovoltaics II

DS 15.1: Topical Talk

Tuesday, March 24, 2009, 15:15–15:45, GER 38

Investigations of electrophysical properties of thin films with embedded nanoparticles by means of an immitance meter — Viktoria V. Malyutina-Bronskaya, •Valerii B. Zalesskii, and Tamara R. Leonova — B. I. Stepanov Institute of Physics NAN of Belarus, Minsk, Belarus

Recently we have undertaken an attempt to use the C-V characteristics measurement method for analyses of the properties of thin films with embedded nanoparticles on a silicon substrate. We have produced ZnO thin films doped with rare earth’s elements on silicon by the reactive magnetron sputtering. C-V dependences measurements at frequencies of 500 kHz and 1 MHz were carried out by the E7-20 immitance meter at room temperature. SEM images of surface and cross-section of the films show the presence of large grains in the size range ≈ 0.1 - 0.3 mkm. Characteristic properties of the C-V dependences, in the forms of humps were observed for both frequencies in the capacitance modulation area. Magnitude of the hump decreases with lowering frequency. Calculations show, that similar characteristics take place when the discreet states have energy level sufficiently narrow energy distribution and are in close vicinity of the Fermi level. Therefore, the results obtained in our investigation show a good conformance of theoretical and experimental data. This gives one a possibility to use this method for investigations of the films with embedded nanoparticles.