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DS: Fachverband Dünne Schichten

DS 16: Poster I

DS 16.13: Poster

Dienstag, 24. März 2009, 09:30–12:30, P5

In situ Raman Spectroscopy and On-line Growth Monitoring of Indium Deposited on Copper Phthalocyanine Films — •Philipp Schäfer¹, Cameliu Himcinschi¹, Vasile Chis², and Dietrich R. T. Zahn¹ — ¹Chemnitz University of Technology, Semiconductor Physics, 09107 Chemnitz, Germany — ²Babes-Bolyai University, Faculty of Physics, 400084 Cluj-Napoca, Romania

Different types of phthalocyanine (Pcs) are well-known for their potential in a huge variety of applications [1]. Copper phthalocyanine (CuPc) and possible applications for novel organic semiconductor devices have been studied intensively in recent years. For technical applications, interfaces between metals and organic semiconducting materials are of special interest, as they form the contact to the organic semiconductor devices. In this study CuPc and afterwards indium are deposited under ultra high vacuum conditions via molecular beam deposition onto hydrogen passivated Si(111) substrates. In situ Raman Spectroscopy (as described in ref. [2]) prooves to be a versatile and non-destructive technique to investigate the growth process. Cluster formation of indium and surface enhanced Raman spectroscopy (SERS) effects are observed during the indium deposition process. The analysis of the evolution of the observed Raman features is performed taking density functional theory calculations into account.

[1] N. B. McKeown, Phthalocyanine Materials (Cambridge University Press, 1998)
[2] V. Wagner et al., Journal of Applied Physics 75, 7330 (1994)