Dresden 2009 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 16: Poster I

DS 16.25: Poster

Dienstag, 24. März 2009, 09:30–12:30, P5

Reflectance spectroscopy of PMMA implanted with 50 keV silicon ions — •Bojana Florian¹, Ivan Stefanov², and Georgi Hadjichristov³ — ¹Bulgarian Institute of Metrology, 2 Prof. P. Mutafchiev Str., 1797 Sofia, Bulgaria — ²Department of Quantum Electronics, Faculty of Physics, Sofia University, 5 James Bourchier Blvd., 1164 Sofia, Bulgaria — ³Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Recently, the modification of the specular reflectivity of PMMA implanted with low-energy (50 keV) silicon ions was studied and nano-clusters formed in PMMA by Si⁺ implantation were evidenced by Raman spectroscopy [1] and electrical measurements [2]. Further, the optical loss due to off-specular (diffuse) reflectivity of this ion-implanted polymer is also of practical interest for applications such as micro-optical lenses, diffraction gratings, Fresnel lenses, waveguides, etc.

We examined both specular and diffuse reflectivity of Si⁺ implanted PMMA in the UV-Vis-NIR. The effect from Si⁺ implantation in the dose range 10¹⁴-10¹⁷ ions/cm² is linked to the structure formed in PMMA where the buried ion-implanted layer has a thickness up to 100 nm. As compared to the pristine PMMA, an enhancement of the reflectivity of Si⁺ implanted PMMA is observed, that is attributed to the modification of the subsurface region of PMMA upon the ion implantation.

[1] G.B. Hadjichristov, V. Ivanov and E. Faulques, Appl. Surf. Sci. 254, 4820-4827 (2008). [2] G.B. Hadjichristov et al., Org. Electron. 9, 1051-1060 (2008).