Dresden 2009 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 16: Poster I
DS 16.36: Poster
Dienstag, 24. März 2009, 09:30–12:30, P5
High resolution electron microscopy and EELS investigations of arrays of Si nanopillars for thermoelectric applications — •Martin Schade1, Nadine Geyer1,2, Bodo Fuhrmann1, Frank Heyroth1, Peter Werner2, and Hartmut S. Leipner1 — 1Interdisziplinäres Zentrum für Materialwissenschaften, Nanotechnikum Weinberg, Martin-Luther-Universität, 06099 Halle — 2Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle
We report on the fabrication of hexagonally ordered, vertically aligned silicon nanopillars (Si NP) and their characterization by means of transmission electron microscopy. Combining colloidal lithography, plasma etching, and catalytic wet etching, Si NP with well defined diameter, length, and density were obtained. The porosity of the Si NP, which seems to be decisive for their thermoelectric properties, was varied by the fabrication procedure. High resolution transmission electron microscopy and electron energy loss spectroscopy have been applied in order to investigate the morphology, the internal structure and the composition of the catalytically etched SiNW. The analysis yielded a single crystalline, porous structure composed of crystalline silicon and SiOx with x≤2.