Dresden 2009 – scientific programme
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DS: Fachverband Dünne Schichten
DS 16: Poster I
DS 16.5: Poster
Tuesday, March 24, 2009, 09:30–12:30, P5
Potentiometry of Operating High-Mobility n-Type OFETs — •Franziska Lüttich, Harald Graaf, Daniel Lehmann, Dietrich R. T. Zahn, and Christian von Borczyskowski — Chemnitz Universtity of Technology, Chemnitz, Germany
Semiconductive organic materials are of great interest for low-cost and flexible applications like organic light-emitting diodes (OLEDs), organic solar cells and organic field-effect transitors (OFETs). For the most organic devices the charge carrier mobility and stability under ambient conditions have to be improved for the everyday use compared to common anorganic devices. On that score a better understanding of the charge transport in organic devices is necessary.
We will present recent results for an air-stable n-type OFET with and without gate insulator treatment using the Kelvin probe force microscopy (KPFM). The top-contact OFETs were fabricated in a high-vacuum chamber (p < 4 · 10−7 mbar) by evaporating about 20 nm N,N’-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2) [1] on top on an p-doped silicon substrate with 100 nm SiOx. Afterwards 20 nm thick gold-electrodes were evaporated through a shadow-mask on top of the organic.[2] For the gate-insulator treatment we used monolayers of N-octadecyltrichlorosilane (OTS).
It can be shown that the OTS monolayer changes the charge transport in the organic material and therefore the electric field distribution as well as the channel-edge forming.
[1] Appl. Phys. Lett. 88, 082104 (2006)
[2] Phys. Stat. Sol. (a) 205, No.3 (2008)