Dresden 2009 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 17: Layer Properties: Electrical, Optical and Mechanical Properties I

DS 17.2: Vortrag

Mittwoch, 25. März 2009, 09:45–10:00, GER 37

Annealing experiments of Sb doped SnO₂ thin films — •Janika Boltz, Dominik Köhl, and Matthias Wuttig — 1.Physikalisches Institut 1A, RWTH Aachen University, Aachen, Germany

Sb-doped SnO₂ films posses a high optical transparency and good electrical conduction, which makes them attractive for TCO applications. In order to deposit suitable films on large area substrates we have explored the properties of Sb-doped SnO₂ thin films that have been prepared by reactive dc magnetron sputtering from a metallic target. Films with reasonable quality can only be produced in a narrow process window. Therefore the films were subsequently annealed at 350 ^∘C in an Ar atmosphere. Samples were optically and electrically characterised employing spectroscopic methods (transmission, reflectance and ellipsometry) and 4-point probe resistivity measurements. In order to investigate the structure and stoichiometry of the sputtered films X-ray diffraction and RBS (Rutherford Backscattering) measurements have been performed. At the transition to highly transparent films the specific resistivity drops to a minimum of 5·10² Ω ·cm and the films transform to crystalline SnO₂. By subsequent annealing the transmission and specific resistivity of Sb-doped SnO₂ films are improved and a wider process window is observed.