Dresden 2009 – scientific programme
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DS: Fachverband Dünne Schichten
DS 17: Layer Properties: Electrical, Optical and Mechanical Properties I
DS 17.3: Talk
Wednesday, March 25, 2009, 10:00–10:15, GER 37
Influence of substrate temperature and oxygen partial pressure on the electrical properties of Al-doped ZnO grown by reactive pulsed magnetron sputtering — •Steffen Cornelius, Mykola Vinnichenko, Anatoly Rogozin, Natalia Shevchenko, Andreas Kolitsch, and Wolfhard Möller — Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf e.V., Bautzner Landstraße 128, 01328 Dresden, Deutschland
The study is focused on improvement of the free electron mobility in Al-doped ZnO films grown by reactive pulsed magnetron sputtering. At optimum growth conditions low-absorbing films are obtained with a Hall mobility of 46 cm2V−1s−1, a free electron density of 6.0·1020 cm−3, and an electrical resistivity of 2.26·10−4 Ωcm. The relation between the mobility and free electron density for different growth conditions is discussed in terms of ionized impurity scattering, impurity clustering, and grain boundary limited transport.