Dresden 2009 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 17: Layer Properties: Electrical, Optical and Mechanical Properties I
DS 17.5: Vortrag
Mittwoch, 25. März 2009, 10:30–10:45, GER 37
Ultrathin SiO films on Si(111) studied by infrared spectroscopy - Probing the Si/SiO interface — •Markus Klevenz, Steffen Wetzel, and Annemarie Pucci — Kirchhoff-Institut für Physik der Universität Heidelberg; INF 227; 69120 Heidelberg
The growth of an ultrathin SiO film on clean Si(111) was studied in situ by infrared spectroscopy. The film was produced by thermal evaporation from a Knudsen cell with a final average film thickness of 12 Å. A large shift of the SiO main vibrational frequency from about 880 cm−1 for very low thicknesses to the bulk value of SiO about 984±6 cm−1 for thicknesses larger than 10 Å was observed. Possible reasons for this strong shift will be discussed.