Dresden 2009 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 2: Thin Film Characterisation: Structure Analyse and Composition (XRD, TEM, XPS, SIMS, RBS, ...) II
DS 2.5: Vortrag
Montag, 23. März 2009, 15:00–15:15, GER 37
Channeling irradiation of LiNbO3: Influence of ion energy and ion species — •Tobias Steinbach, Frank Schrempel, Thomas Gischkat, and Werner Wesch — Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena
Ion irradiation of LiNbO3 causes the formation of defects due to nuclear as well as electronic energy deposition єn and єe, respectively. However, the defect formation is influenced by the orientation of the crystal. In order to investigate the effect of єn and єe on the damage formation x-cut LiNbO3 single crystals were irradiated on- and off- axis using Si+ and Cu+ ions with energies ranging from 550 keV to 2 MeV. We demonstrate for on-axis irradiation that at low ion energies where єn dominates the formation of defects, the defect distribution is shifted to larger depths compared to off-axis irradiation. The investigation of the shift shows a square-root dependence on both ion energy and ion species. Furthermore, on-axis irradiation was done using high-ion energies where defects are formed in the near-surface region due to electronic energy loss. Compared to off-axis irradiation a thinner amorphous surface layer was formed as a result of the reduced electronic energy loss in the case of on-axis irradiation. For on-axis irradiation єe has been estimated in two different ways considering the layer thickness and the penetration range of the incident ions.