Dresden 2009 – scientific programme

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DS: Fachverband Dünne Schichten

DS 26: Poster II

DS 26.24: Poster

Wednesday, March 25, 2009, 09:30–12:30, P5

Pulsed laser interference lithography — •Stephen Riedel, Matthias Hagner, Paul Leiderer, and Johannes Boneberg — Universität Konstanz, Fachbereich Physik, LS Leiderer, 78457 Konstanz

Laser interference lithography with a single ns-pulse is used to structure different substrates in a single illumination step. In constrast to the common cw-laser interference lithography no resists or other preparation steps are needed. For that purpose we use a frequency doubled Nd:YAG laser (FWHM = 13ns, λ=532nm) and intensities between 50-200mJ. We split the beam into several parts and redirect them onto the sample surface. We compare results for metal and semiconductor thin films as well as for bulk surfaces. We find distinct differences between silicon, germanium and bismuth films on the one hand and gold and tantalum films on the other hand. From these results we propose a model for the ongoing processes.