Dresden 2009 – scientific programme

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DS: Fachverband Dünne Schichten

DS 26: Poster II

DS 26.2: Poster

Wednesday, March 25, 2009, 09:30–12:30, P5

Amorphous / nanocrystalline metal-silicide films prepared by surfactant sputtering with low energy ion-beam — •Kun Zhang, Hans Hofsäss, and Hayo Zutz — II. Physikalisches Institut , Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

The self-aligned silicide process have been widely applied to very large-scale integrated metal-oxide semiconductor devices due to their important properties such as low resistivity and low contact resistance to Si as well as excellent process compatibility with the standard Si process technology. Nickel-silicide is gradually replacing TiSi₂ and CoSi₂ (the most commonly used silicides), due to its low temperature of formation and less Si consumption. Platinum-silicide has relatively low Schottky barrier of 0.3 eV to p-type Si and excellent thermal stability. Surfactant sputtering is a novel, versatile sputter technique utilizing the steady state coverage of a substrate surface with up to 10¹⁶ /cm² of foreign or self atoms simultaneously during sputter erosion by combined ion irradiation and atom deposition. These surfactant atoms give rise to a steady state surface coverage of the substrate and strongly modify the substrate sputter yield on atomic to macroscopic length scales. In this study, surfactant sputtering was used to form nickel-silicide and platinum-silicide films. Si(100) substrates were eroded using 5 keV Xe-ions and 10 — 20 keV Ar ions under continuous deposition of platinum and nickel from surfactant targets, which were sputtered simultaneously by the same ion-beam. The surface topography, the composition, and the microstructure of the silicide nanocomposites have been analyzed via RBS, XRD, AFM and TEM.