Dresden 2009 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 26: Poster II
DS 26.31: Poster
Mittwoch, 25. März 2009, 09:30–12:30, P5
Transport properties and electronic structure of Al-doped ZnO/Ag/Al-doped ZnO multilayer systems — •Martin Philipp1,2, Christian Hess1, Hartmut Vinzelberg1, Martin Knupfer1, Bernd Büchner1, Hadia Gérardin2, and Jacques Jupille3 — 1Leibnitz-Institute for Solid State and Materials Research IFW Dresden, 01171 Dresden, Germany — 2Saint-Gobain Recherche, F-93303 Aubervilliers Cedex, France — 3Institut des NanoSciences de Paris, Université Pierre et Marie Curie - Paris 6, France
Al-doped ZnO/Ag/Al-doped ZnO layer stacks are widely used as low-emissivity coatings for building glazing due to their high reflectance in the infrared and high transmittance in the visible spectrum. For a fundamental understanding of their physical properties, the layer stacks, which were produced by magnetron sputtering, have been investigated regarding the transport properties and the electronic structure of the silver layer. As the conductivity of the film is proportional to the reflectance in the infrared, a higher conductivity also means an improvement of the low-emissivity properties. In order to investigate the electronic structure of the multilayer stack and to observe changes in the structure by changing the interface properties, electron energy-loss spectroscopy (EELS) was performed in the low energy region (0 - 14eV). Furthermore, crystallographic characteristics of the system were determined by measuring the angular dependent elastically scattered electron pattern.