Dresden 2009 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 26: Poster II
DS 26.51: Poster
Mittwoch, 25. März 2009, 09:30–12:30, P5
Investigations on the relaxation behavior of metastable tensile strained Si:C alloys — •Ina Ostermay1, Andreas Naumann1, Felix Ulomek2, Thorsten Kammler3, and Volker Mohles2 — 1Fraunhofer-Center Nanoelektronische Technologien, Königsbrücker Straße 180, D-01099 Dresden — 2Institut für Metallkunde und Metallphysik, RWTH Aachen — 3AMD Saxony LLC & Co. KG, Wilschdorfer Landstraße 101, D-01099 Dresden
In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C and SiGe are being investigated. It is crucial to the application to avoid strain relaxation of those layers. In this work, a comparative study of the relaxation behavior of tensile strained Si:C layers as well as compressive strained SiGe due to thermal treatment is conducted. For both material systems, the relaxation phenomena were investigated by means of high resolution x-ray diffraction, reciprocal space maps around the 004 and 224 reflexes, as well as AFM and TEM analysis. The relaxation behavior of Si:C was found not to rely on the formation of dislocations as it is the case for SiGe alloys, but on the transition of substitutional carbon to interstitial carbon, or - if the thermal budget is sufficient - the precipitation of Carbides. Although the out of plane lattice constant decreases during the strain relaxation of Si:C layers, the in-plane lattice constant was found to remain unchanged from the as-deposited ones. For both alloys, models to describe the relaxation behavior are proposed.