Dresden 2009 – scientific programme
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DS: Fachverband Dünne Schichten
DS 26: Poster II
DS 26.53: Poster
Wednesday, March 25, 2009, 09:30–12:30, P5
Electrical characterization of USJs in Boron doped Si — •Marcel Ogiewa1, Michael Zier2, and Bernd Schmidt2 — 1Fraunhofer Center for Nanoelectronic Technologies, Koenigsbruecker Strasse. 180, D-01099 Dresden, Germany — 2Forschungszentrum Dresden-Rossendorf, Bautzner Landstraße 128, D-01328 Dresden, Germany
The demand for higher performance and better productivity in semiconductor industry causes device sizes to shrink continuously. The reduction in transistor area is achieved by shortening the length of the gate oxide. Due to the well-known scaling rules, this affects other size parameters as well, e.g. demands for ultra shallow dopant profiles to form the junctions. This in turn allows for shorter reaction times. Here, the dopant concentration is higher than the solubility in the substrate and thus the ion implantation dose only cannot yield sufficient information about the dopant behavior, e.g. the spatial profile and electrical activation.
Hence there is a need for techniques to determine these parameters in ultra shallow junctions (USJs). Due to the thin layers, conventional SPM methods cannot yield all the necessary information. We developed a measuring station to determine a depth profile by stepwise oxidation (SWOP) with nanometer resolution of electrical parameters, e.g. the sheet resistance. The dopant concentration can be obtained by hall measurements, where we also aim to obtain a depth profile. The feasibility of this technique is shown by calibration data and first measurement results on relevant doped samples.