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DS: Fachverband Dünne Schichten

DS 26: Poster II

DS 26.54: Poster

Mittwoch, 25. März 2009, 09:30–12:30, P5

Real-time STM growth observations of Mo/Si multilayer systems — •Vincent Fokkema, Jan Verhoeven, and Marcel Rost — Kamerlingh Onnes Laboratory, Leiden University, P.O.Box 9504, 2300 RA, Leiden, The Netherlands

For the very first time, in situ, real-time STM studies are performed on the formation of Mo/Si multilayer systems. These multilayers will be used as mirrors in the next generation extreme UV and X-ray lithography. An important figure of merit of these mirrors is the reflectivity, which scales with the Mo/Si interface smoothness. When Mo grows on Si, the formation of Mo_xSi_y at the interface degrades its sharpness and thus diminishes the reflectivity. In addition, it is suggested that the Mo-silicide introduces roughness by influencing the growth of the polycrystalline Mo layer. Little is known of the atomic details that govern the silicide formation and the growth processes that determine the Mo layer morphology. We have developed an STM that is capable of imaging film growth during deposition enabling a unique look on these processes. We present first results of our new STM when applying it to the Mo nucleation and growth on Si.