Parts | Days | Selection | Search | Downloads | Help
DS: Fachverband Dünne Schichten
DS 26: Poster II
DS 26.58: Poster
Wednesday, March 25, 2009, 09:30–12:30, P5
Measurements of structural and electrical properties of a pentacene layer in field effect transistors under bending stress — •vitalij scenev1, nikolaj severin1, Jörn-Oliver Vogel1, Zhanh Jian1, Stefan eilers1, Jürgen Rabe1, piero cossedu2,3, analisa bonfiglio2,3, and e orgiu2,3 — 1HU-Berlin, Newtonstr. 15, GErmany — 2University of Cagliari, , Piazza di Armi, Cagliari, Italy — 3CNR-INFM, via Campi 213A, I-41100 Modena, Italy
The increasing interest in organic thin-film transistors (OTFTs) for low cost flexible electronic devices has stimulated research into strain induced changes of OTFT's electrical characteristics. A pronounced sensitivity of the device characteristics to the organic layer deformation has been attributed to strain induced morphological changes. However, we are not aware of any in-situ measurements which would demonstrate the assumed morphological changes of the organic layer. Here we demonstrate an experimental setup and first results of simultaneous measurements of electric properties and surface morphology employing scanning force microscopy for a pentacene based OTFT. The strain of the device is induced in a controlled and reversible manner with a special grip construction.