Dresden 2009 – scientific programme

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DS: Fachverband Dünne Schichten

DS 26: Poster II

DS 26.58: Poster

Wednesday, March 25, 2009, 09:30–12:30, P5

Measurements of structural and electrical properties of a pentacene layer in field effect transistors under bending stress — •vitalij scenev¹, nikolaj severin¹, Jörn-Oliver Vogel¹, Zhanh Jian¹, Stefan eilers¹, Jürgen Rabe¹, piero cossedu^2,3, analisa bonfiglio^2,3, and e orgiu^2,3 — ¹HU-Berlin, Newtonstr. 15, GErmany — ²University of Cagliari, , Piazza di Armi, Cagliari, Italy — ³CNR-INFM, via Campi 213A, I-41100 Modena, Italy

The increasing interest in organic thin-film transistors (OTFTs) for low cost flexible electronic devices has stimulated research into strain induced changes of OTFT's electrical characteristics. A pronounced sensitivity of the device characteristics to the organic layer deformation has been attributed to strain induced morphological changes. However, we are not aware of any in-situ measurements which would demonstrate the assumed morphological changes of the organic layer. Here we demonstrate an experimental setup and first results of simultaneous measurements of electric properties and surface morphology employing scanning force microscopy for a pentacene based OTFT. The strain of the device is induced in a controlled and reversible manner with a special grip construction.