Dresden 2009 – scientific programme

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DS: Fachverband Dünne Schichten

DS 30: Application of Thin Films I

DS 30.1: Talk

Thursday, March 26, 2009, 14:15–14:30, GER 37

Extraction of nitride trap density distribution in SONOS (silicon-oxide-nitride-oxide-silicon) structures based on an advanced thermal emission model — •Kerstin Bernert¹, Jonas Schönlebe², Christiane Oestreich², and Thomas Mikolajick² — ¹Forschungszentrum Dresden-Rossendorf, Bautzner Landstraße 128, 01328 Dresden — ²Institut für Elektronik- und Sensormaterialien, Technische Universität Bergakademie Freiberg, 09599 Freiberg

As a result of continued scaling and the emphasis on low power and low voltage operation, silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory has received more attention recently. In this talk we investigate the charge decay characteristics of SONOS devices at elevated temperatures. Based on the thermal emission model as the dominant charge loss mechanism, the trap density energy distribution is determined. Furthermore, we present an advanced model which includes the influence of subsequent tunneling through the bottom oxide after thermal excitation in the conduction band of the nitride.