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DS: Fachverband Dünne Schichten

DS 30: Application of Thin Films I

DS 30.2: Vortrag

Donnerstag, 26. März 2009, 14:30–14:45, GER 37

Liquid Injection Atomic layer deposition of metallic Ru and RuO₂ thin films for electrode applications — •Susanne Hoffmann-Eifert, Seong Keun Kim, and Rainer Waser — Forschungszentrum Jülich, IFF-IEM and JARA-FIT, 52425 Jülich, Germany

In this project we studied the liquid injection atomic layer (LI-ALD) deposition of metallic Ru and RuO₂ thin films for application as electrode layers. The new capacitors will be built up from ultra thin films of higher-k materials like SrTiO₃ or (Ba, Sr)TiO₃ in order to decrease the equivalent oxide thickness. In order to have a conducting metallic or oxide electrode available for 3D integrated capacitor structures, we investigated the ALD growth process for Ru/RuO₂ thin films in detail. In this study, RuO₂ films were deposited using traveling wave type ALD reactor. Tris(2,2,6,6-tetra-methyl-3,5-heptanedionato)ruthenium(III)(Ru(TMHD)3) dissolved in ethylcyclohexane was used as a metal source. The Ru-solution was pulse injected and evaporated in a vaporizer at a temperature of 200 ^∘C. The growth behavior of the ALD Ru/RuO₂ films was studied as a function of the substrate temperature and the type of oxidant. The films were characterized with respect to their structural, morphological and resistance properties. Special interest is layed on the effect of the solvent on the oxidation state of the conducting Ru based thin films. A model is suggested which explains the different growth behavior of Ru/RuO₂ films in "bubbler-type" and LI-ALD-type processes.