Dresden 2009 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

DS: Fachverband Dünne Schichten

DS 30: Application of Thin Films I

DS 30.3: Talk

Thursday, March 26, 2009, 14:45–15:00, GER 37

Liquid Injection Atomic Layer Deposition of Lead Zirconate Titanate Thin Films for Three Dimensional Ferroelectric Capacitor Structures — •Susanne Hoffmann-Eifert¹, Takayuki Watanabe¹, Cheol Seong Hwang², and Rainer Waser¹ — ¹Forschungszentrum Jülich, IFF-IEM and JARA-FIT, 52425 Jülich, Germany — ²Dept. of Materials Science and Engineering, Seoul National University, Seoul, Korea

In order to combine the functionality of ferroelectric oxides with semiconductor memory devices, thin films with a thickness in the range of about 10 nm have to be integrated onto 3D stack structures with lateral diameter of about 100 nm and a height in the micrometer regime. The thin films have to be homogeneous in thickness and in composition. A fully conformal deposition onto extreme 3D structures can only be achieved by means of an atomic layer deposition (ALD) process. Here, we present an approach by which uniform coverage of multi-component oxide films over complex structures can be achieved in both, the cation composition and the film thickness. Quaternary PZT films were deposited using a combination of liquid injection ALD steps of binary PbO, ZrO_x, and TiO_x films. Pb(TMHD)₂, Ti(Oi-Pr)₄, and Zr(DIBM)₂, dissolved in ethylcyclohexane, and H₂O were used as source materials. PZT films were grown on Pt or Ir-covered Si substrates at 240^∘C. A further annealing step after deposition was performed to crystallize the material. ALD-PZT films were grown onto 3D structures with homogeneous thickness and cation composition, even after crystallization.