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DS: Fachverband Dünne Schichten

DS 30: Application of Thin Films I

DS 30.5: Vortrag

Donnerstag, 26. März 2009, 15:15–15:30, GER 37

Influence of Stabilizers in ZnO nanodispersions on the FET device performance — •Simon Bubel, Donna Nikolova, Norman Mechau, and Horst Hahn — Institute of Nanotechnology, Forschungszentrum Karlsruhe, 76021 Karlsruhe, Germany

In order to build printable inorganic electronic devices, semiconducting suspensions which can be processed at low temperatures and low-cost manufacturing techniques are needed. Stabilized suspensions made of zinc oxide nanoparticles were used to fabricate field-effect transistors (FETs) by spin coating. The performance of the devices is strongly affected by the nature and concentration of the compounds added to stabilize the nanodispersions. An increase of the field-effect mobility by more than one order of magnitude is observed by increasing the stabilizer concentration from 3 to 13 wt %. A further increase of the concentration above 13 wt % results in a decrease of the field-effect mobility. This behaviour can be explained by changes in the morphology, the particle-particle junction, and the passivation of surface defect sites.