Dresden 2009 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 30: Application of Thin Films I
DS 30.7: Vortrag
Donnerstag, 26. März 2009, 15:45–16:00, GER 37
Self-Aligned Field Emission Device Prepared by Swift Heavy Ion Irradiation. — •Han-Gregor Gehrke1, Anne-Katrin Nix1, Johann Krauser2, Christina Trautmann3, Alois Weidinger4, Jürgen Bruns5, Frank Wünsch4, and Hans Hofsäss1 — 1Georg-August Universität, Göttingen, Deutschland — 2Hochschule Harz, Wernigerode, Deutschland — 3Gesellschaft für Schwerionenforschung, Darmstadt, Deutschland — 4Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Deutschland — 5Technische Universität, Berlin, Deutschland
Swift heavy ion irradiation of tetrahedral amorphous carbon (ta-C) results in conductive ion tracks with a diameter of about 8 nm. The goal of our work is the fabrication of self-aligned field emission devices. The ion tracks embedded in the insulating ta-C film form nanosized field emitters. The gate structure is produced by a thin insulating SiNX and a chromium layer on top of the carbon film. Finally, a spin coated polycarbonate layer is placed on top of the sample. The irradiation of the layer package leads to latent tracks in the polycarbonate above each conducting track in the ta-C. Therefore, after opening the polycarbonate mask with chemical wet etching, the pores are well aligned with the ion track underneath. Finally, the chromium and the SiNX can be opened by sputtering or plasma etching to create the complete structure. The advantage of this approach is stability of the layer package; no free standing nanowires can be damaged. We present first results of experiments with the described self-aligned field emission structure.