DS 30: Application of Thin Films I
Thursday, March 26, 2009, 14:15–16:00, GER 37
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14:15 |
DS 30.1 |
Extraction of nitride trap density distribution in SONOS (silicon-oxide-nitride-oxide-silicon) structures based on an advanced thermal emission model — •Kerstin Bernert, Jonas Schönlebe, Christiane Oestreich, and Thomas Mikolajick
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14:30 |
DS 30.2 |
Liquid Injection Atomic layer deposition of metallic Ru and RuO2 thin films for electrode applications — •Susanne Hoffmann-Eifert, Seong Keun Kim, and Rainer Waser
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14:45 |
DS 30.3 |
Liquid Injection Atomic Layer Deposition of Lead Zirconate Titanate Thin Films for Three Dimensional Ferroelectric Capacitor Structures — •Susanne Hoffmann-Eifert, Takayuki Watanabe, Cheol Seong Hwang, and Rainer Waser
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15:00 |
DS 30.4 |
Effect of the interface roughness on the performance of nanoparticulate zinc oxide field-effect transistors — •Koshi Okamura, Norman Mechau, Donna Nikolova, and Horst Hahn
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15:15 |
DS 30.5 |
Influence of Stabilizers in ZnO nanodispersions on the FET device performance — •Simon Bubel, Donna Nikolova, Norman Mechau, and Horst Hahn
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15:30 |
DS 30.6 |
Anomalous Nitrogen Diffusivity During Plasma Nitriding of CoCr Alloys at High Temperatures — •Johanna Lutz, Stephan Mändl, and Bernd Rauschenbach
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15:45 |
DS 30.7 |
Self-Aligned Field Emission Device Prepared by Swift Heavy Ion Irradiation. — •Han-Gregor Gehrke, Anne-Katrin Nix, Johann Krauser, Christina Trautmann, Alois Weidinger, Jürgen Bruns, Frank Wünsch, and Hans Hofsäss
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