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DS: Fachverband Dünne Schichten

DS 33: Thermoelectric Thin Films and Nanostructures I

DS 33.3: Vortrag

Donnerstag, 26. März 2009, 11:15–11:30, GER 38

Fabrication of Si and Si-Ge nanopillars for the investigation of thermoelectric properties — •Nadine Geyer¹, Bodo Fuhrmann², Manfred Reiche¹, Trung-Kien Nguyen-Duc¹, Silko Grimm¹, Hartmut S. Leipner², and Peter Werner¹ — ¹Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale — ²Interdisziplinäres Zentrum für Materialwissenschaften, Heinrich-Damerow-Str. 4, 06120 Halle/Saale

A renewed interest in thermoelectric materials appeared in the last decade through the search for environment-friendly methods of power generation and the implementation of new concepts of nanotechnology due to the prospect of much higher conversion efficiency. Si nanopillars (NPs) and Si NPs containing a Si-Ge superlattice are expected to have superior thermoelectric properties (figure of merit ZT). Here, we report on the synthesis of the Si and the Si-Ge NPs with diameters below 25 nm. Starting from Si-Ge multilayer structures grown by MBE and combining lithography and metal-assisted chemical etching techniques, hexagonally ordered, vertically aligned Si and Si-Ge NPs were obtained, whose diameter, density and length can be controlled by localized etching. The morphology, the inner structure and the chemical composition were investigated by SEM, TEM and EDX. Future steps will be to investigate the thermoelectric properties of these etched Si and Si NPs containing a Si-Ge superlattice.