Dresden 2009 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 35: Thermoelectric Thin Films and Nanostructures II
DS 35.4: Vortrag
Donnerstag, 26. März 2009, 16:30–16:45, GER 38
Thermoelectric properties of FeSb2 thin films — •Peijie Sun1, Niels Oeschler1, Ye Sun2, Simon Johnsen2, Bo B. Iversen2, and Frank Stelich1 — 1Max Planck Institute for Chemical Physics of Solids, Dresden, Germany — 2Department of Chemistry, University of Aarhus, Denmark
FeSb2 is a strongly correlated, narrow-gap semiconductor showing the largest thermoelectric power factor (> 2000 µW/K2cm) so far known at low temperatures [1]. The enhanced thermoelectricity is believed to result from a large electronic contribution from the narrow and correlated bands. However, the large thermal conductivity (> 300 W/Km in single crystals) prevents the realization of a high dimensionless figure of merit ZT for practical electronic cooling application in the cryogenic temperature range. The thermal conductivity might be largely reduced by introducing nanometer-scale internal structures to selectively scatter propagating phonons. In this work, we successfully deposited thin films of FeSb2 by sputtering techniques on various substrates. Thermoelectric properties of the thin films will be presented in comparison to those of the bulk system.
[1] A. Bentien et al, Europhys. Lett. 80 (2007) 17008.