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HL: Fachverband Halbleiterphysik
HL 1: III-V semiconductors I
HL 1.3: Vortrag
Montag, 23. März 2009, 10:45–11:00, BEY 81
Investigation of the Bir-Aronov-Pikus spin relaxation mechanism in (110) GaAs quantum wells — •Stefan Oertel1, Jens Hübner1, Dieter Schuh2, Werner Wegscheider2, and Michael Oestreich1 — 1Universität Hannover, Institut für Festkörperphysik, Abteilung Nanostrukturen, Appelstr. 2, D-30167 Hannover — 2Universität Regensburg, Institut für Experimentelle und Angewandte Physik, D-93040 Regensburg
We determine the spin relaxation time τs in (110)-oriented GaAs quantum wells by time- and polarization resolved photoluminescence spectroscopy. The major spin relaxation channel in III-V compounds, the D’yakonov-Perel’ mechansim, is suppressed in growth direction of (110)-oriented heterostructures and the most prominent remaining spin relaxation mechanism in these quantum wells is the Bir-Aronov-Pikus (BAP) mechanism via interaction with unpolarized holes. By variation of the excitation density, we are able to directly control the electron hole density and thus determine the efficiency of the BAP spin relaxation mechanism. The electron hole interaction also depends strongly on temperature and hence the temperature dependence of τsBAP directly yields a measure for the electron hole interaction strength.