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HL: Fachverband Halbleiterphysik

HL 1: III-V semiconductors I

HL 1.5: Vortrag

Montag, 23. März 2009, 11:15–11:30, BEY 81

Temperature and Concentration Dependent Spin Noise Measurements in GaAs — •Michael Römer, Georg Müller, Jens Hübner, and Michael Oestreich — Institute for Solid State Physics, Gottfried Wilhelm Leibniz University Hannover, Appelstr. 2, 30167 Hannover, Germany

Spin noise spectroscopy is an elegant method to access electron properties of direct gap semiconductors in thermal equilibrium while avoiding carrier heating and excitation of electron hole pairs [1]. This technique is used to examine the electron spin lifetime and noise power in GaAs in dependence of electron doping concentration, sample temperature, and the probe laser wavelength. The measured power of the spin noise signal is used to extract information about the electron statistics and the position of the electrons in the conduction band. The measured data can be well explained using a model based on the change of the index of refraction due to the ever present thermal fluctuations of the electron spin.

[1] M. Römer, J. Hübner and M. Oestreich “Spin Noise Spectroscopy in Semiconductors”, Rev. Sci. Instrum. 78, 103903 (2007).