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HL: Fachverband Halbleiterphysik

HL 1: III-V semiconductors I

HL 1.9: Vortrag

Montag, 23. März 2009, 12:30–12:45, BEY 81

Electrostatic force microscopy measurement of carbon nanotube field-effect transistors — •Imad Ibrahim, Nitesh Ranjan, Juliane Posseckardt, Michael Mertig, and Gianaurelio Cuniberti — Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01062 Dresden, Germany

Multi-tube field-effect transistors (FETs) are assembled between two metallic electrodes using dielectrophoresis, in which a solution of dispersed single-walled carbon nanotubes (SWCNTs) is put between the electrodes, and an AC voltage with an amplitude of 5-8 V and a frequency of 300 kHz is applied [1,2]. After depositing the SWCNTs between the electrodes, the solution is blotted with a filter paper and the sample is dried with air. Room temperature I-V measurements are performed for such multi-tube devices which are found to have transistor-like behaviour in most cases. Further on, the devices are characterized with Atomic force microscopy (AFM) and electrostatic force microscopy (EFM). By applying a voltage to the AFM tip in lift mode [3], we are able to detect changes of the potential along the deposited SWCNT interconnects, and thus, to identify local defects in the transistor channels.

[1] S. Taeger, M. Mertig, Int. J. Mat. Res. 98, 742 (2007). [2] N. Ranjan, M. Mertig, phys. stat. sol. (b) 245, 2311 (2008). [3] T. P. Gotszalk, P. Grabiec, I. W. Rangelow, Materials Science 21, 333 (2003).