Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 11: Focused Session: Semi- and nonpolar group III nitrides I

HL 11.7: Vortrag

Dienstag, 24. März 2009, 12:30–12:45, HSZ 01

Growth of nonpolar a-plane GaN on r-plane Sapphire via HVPE — •Stephan Schwaiger, Thomas Wunderer, Frank Lipski, and Ferdinand Scholz — Institut für Optoelektronik, Universität Ulm

We report on the growth of a-plane GaN on r-plane sapphire via hydride vapor phase epitaxy (HVPE). Prior to the HVPE growth the substrates were loaded into a MOVPE reactor to deposit a template GaN layer on an AlN nucleation layer. The MOVPE growth parameters have been optimized and SiN interlayers for defect reduction have been investigated and successfully introduced. By varying typical growth parameters like the V/III ratio, the temperature, and the pressure during the HVPE growth just small influences on the crystal quality could be observed. The improvement of the MOVPE grown templates seems to have more impact on the resulting nonpolar layers. These layers have been characterized by x-ray rocking curve as well as photoluminescence (PL) measurements. Our optimized layers showed a comparably strong near-band-edge excitonic line as compared to the commonly observed lower energy defect signals caused by stacking faults.