Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 13: Optical properties
HL 13.5: Talk
Tuesday, March 24, 2009, 10:30–10:45, BEY 118
Microscopic Theory of the optical properties of Ga(AsBi) quantum wells — •Sebastian Imhof1, Christina Bückers2, Angela Thränhardt1, Jörg Hader3, Jerome V. Moloney3, and Stephan W. Koch2 — 1Fakultät für Naturwissenschaften, Technische Universität Chemnitz, 09107 Chemnitz — 2Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps Universität Marburg, Renthof 5, 35032 Marburg — 3Optical Sciences Center, University of Arizona, Tucson, Arizona 85721, USA
Ga(AsBi) is a serious candidate for infrared diode lasers because the bandgap of GaAs is reduced by as much as 60–80 meV per percent Bi that is incorporated. Thus, a wide wavelength range in the infrared region can be reached.
Although the growth of heterostructures is still not feasible in this material system, we have access to the optical properties, e.g. material gain and photoluminescence as well as radiative and non-radiative laser loss processes of Ga(AsBi)/(AlGa)As quantum wells, by using a consistent microscopic theory. We calculate the bandstructure by using a valence band anticrossing model and investigate the influence of the anticrossing parameters on the optical properties.