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HL: Fachverband Halbleiterphysik

HL 16: III-V semiconductors II

HL 16.4: Vortrag

Dienstag, 24. März 2009, 10:15–10:30, POT 151

High Excitation Photoluminescence studies on epitaxially grown AlN layers — •Robert Anton Richard Leute¹, Martin Feneberg¹, Klaus Thonke¹, Rolf Sauer¹, Sarad Bahadur Thapa², Ferdinand Scholz², Yoshitaka Taniyasu³, and Makoto Kasu³ — ¹Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm, Germany — ²Institut für Optoelektronik, Universität Ulm, 89069 Ulm, Germany — ³NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakiyama, Atsugi, 243-0198, Japan

Nominally undoped high quality AlN layers are investigated by lowtemperature photoluminescence (PL) spectroscopy, using the focused beam of an ArF Excimer Laser (193 nm) for excitation. For samples grown by MOVPE on different substrates, namely sapphire and SiC, different types of spectra are found. Comparison with low excitation photoluminescence and cathodoluminescence shows new contributions increasing with superlinear response to the excitation intensity. The observed contributions are discussed in terms of radiative decay of biexcitons, exciton-exciton scattering (P band), and electron hole plasma.