Dresden 2009 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 2: GaN: devices
HL 2.1: Vortrag
Montag, 23. März 2009, 10:15–10:30, BEY 118
Development of InGaN-based thin disk lasers — •R. Debusmann1, V. Hoffmann2, W. John2, O. Krüger2, P. Vogt1, M. Kneissl1, and M. Weyers2 — 1Institut für Festkörperphysik, Technische Universität Berlin, EW 6-1, Hardenbergstr. 36, 10623 Berlin — 2Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin
Thin disk lasers consisting of an optically pumped vertical cavity surface emitting laser with an external cavity have gained much interest in recent years. The main reason for that is that they combine high power output of edge emitting lasers with high beam quality of surface emitting devices.
In particular for the group III-nitride material system thin disk lasers seem a promising solution for high power applications, because of the inherent problems in this material system to realize epitaxial structures with low electrical losses. Here we report on the development of InGaN thin disk lasers for emission wavelengths near 405 nm.
Besides the epitaxial heterostructure a number of fabrication steps have to be developed in order to realize such devices. We will discuss some of the developed key processes for device integration. In particular deposition of SiO2/Ta2O5-DBR mirror stacks with reflectivity greater than 99.5% and substrate removal by excimer-laser liftoff in order to form the laser resonator will be discussed.