Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 21: Devices

HL 21.4: Vortrag

Dienstag, 24. März 2009, 14:45–15:00, BEY 81

Characterization of of ZnO and MgZnO MSM Photodectecors — •Lucie Behnke, Zhang Zhipeng, Gisela Biene, Mathias Schmidt, Alexander Müller, Holger v. Wenckstern, Marius Grundmann, and Holger Hochmuth — Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstr. 5, Germany

There is a wide range of applications for small, fast and transparent photodetectors. For their fabrication ZnO is a promising material, because of its large, direct bandgap. We investigated interdigital metal-semiconconductor-metal structures of different Schottky contact metals on Mg_xZn_1−xO; the concentration of magnesium x varies from 0 to 0,21. The contacts were realized by reactiv DC sputtering, which results in high-quality Schottky contacts. The reproducibility was confirmed by current-voltage measurements of about 80 devices. The detectors were characterized by photocurrent, noise and light beam induced current measurements. Further, we found a correlation between the magnesium concentration and the leakage current. We discuss the quantum efficiency in dependence of x.