Dresden 2009 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 21: Devices
HL 21.5: Talk
Tuesday, March 24, 2009, 15:15–15:30, BEY 81
Low operation voltage light emitting device based on ZnO nanoparticles — •Ekaterina Neshataeva1, Tilmar Kümmell1, André Ebbers2, and Gerd Bacher1 — 1Werkstoffe der Elektrotechnik and CeNIDE, Universität Duisburg-Essen, 47057 Duisburg — 2Evonik Degussa GmbH, Creavis, 45764 Marl, Germany
Semiconductor nanoparticles are very attractive candidates for future large-area light emitting devices that are both cost-effective and robust. In this contribution we demonstrate a ZnO nanoparticle light emitting device, which operates at low voltages without the need of any organic support layers. Tight nanoparticle layers were fabricated by a spin coating process using commercially available ZnO nanoparticles from the gas phase and fluorine-doped tin oxide glass as a substrate. After evaporation of a top electrode, a diode-like I-V characteristic was obtained. The device operation at room temperature starts at 4V and shows electroluminescence in the visible spectral range and a pronounced UV peak related to near-band gap emission of the ZnO. Thus, our findings open a path towards all-inorganic large-area particle based luminescent devices.