Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 21: Devices
HL 21.7: Talk
Tuesday, March 24, 2009, 15:45–16:00, BEY 81
First prototype of a novel memory device based on self-organized quantum dots — •Andreas Marent1, Tobias Nowozin1, Martin Geller2, Johannes Gelze1, and Dieter Bimberg1 — 1Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin — 2Fachbereich Physik und CeNIDE, Universität Duisburg-Essen , Lotharstrasse 1, 47048 Duisburg
We have developed a memory concept (QD-Flash) based on self-organized quantum dots (QDs) [1] with the potential to overcome the restrictions of nowadays most important semiconductor memory, the Flash-memory. The main disadvantage of the Flash-memory results from the use of Si/SiO2 which leads to a fundamental trade-off between write time and storage time. In contrast, using III-V semiconductors in the QD-Flash, ultra fast write times (< ns) in combination with a long storage time (>> 10 years) can be realized.
We demonstrate a first prototype of the QD-Flash with full functionality using InAs-QDs in Al0.9Ga0.1As as memory units. The performance of the prototype has been evaluated up to room temperature. Read out of the stored information was successfully realized by measuring the resistance of a two-dimenional hole gas formed in a GaAs/Al0.9Ga0.1As quantum well embedded below the QD-layer.
[1] M. Geller, A. Marent, and D. Bimberg, Auf Halbleiter-Nanostrukturen basierender nicht-flüchtiger Speicher "A non-volatile memory based on semiconductor nanostructure", CPT patent application, submitted (2006).