HL 21: Devices
Dienstag, 24. März 2009, 14:00–16:00, BEY 81
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14:00 |
HL 21.1 |
High-Performance Tunnel Field Effect Transistor (TFET) using ultra-high-k gate dielectrics — •Martin Schlosser, Helmut Lochner, Martin Sauter, Thomas Zilbauer, Torsten Sulima, and Ignaz Eisele
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14:15 |
HL 21.2 |
Separation and Analysis of different leakage mechanisms in modern MOSFETs — •Guntrade Roll, Matthias Goldbach, Andre Wachowiak, Juergen Holz, and Lothar Frey
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14:30 |
HL 21.3 |
Vertical IMOS with n-doped deltas for high temperature applications — •Tina Kubot, Ulrich Abelein, Peter Iskra, Torsten Sulima, and Ignaz Eisele
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14:45 |
HL 21.4 |
Characterization of of ZnO and MgZnO MSM Photodectecors — •Lucie Behnke, Zhang Zhipeng, Gisela Biene, Mathias Schmidt, Alexander Müller, Holger v. Wenckstern, Marius Grundmann, and Holger Hochmuth
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15:00 |
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15 min. break
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15:15 |
HL 21.5 |
Low operation voltage light emitting device based on ZnO nanoparticles — •Ekaterina Neshataeva, Tilmar Kümmell, André Ebbers, and Gerd Bacher
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15:30 |
HL 21.6 |
E-Beam alignment markers for high overlay accuracy — •Jürgen Moers, Julian Gerharz, Stefan Trellenkamp, and Detlev Grützmacher
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15:45 |
HL 21.7 |
First prototype of a novel memory device based on self-organized quantum dots — •Andreas Marent, Tobias Nowozin, Martin Geller, Johannes Gelze, and Dieter Bimberg
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