Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 22: Focused Session: Semi- and nonpolar group III nitrides II

HL 22.5: Vortrag

Dienstag, 24. März 2009, 16:00–16:15, BEY 118

Characterization of photoluminescence (PL) emission from semipolar {1-101} InGaN quantum wells — •Hans-Jürgen Möstl¹, Clemens Vierheilig¹, Ulrich T. Schwarz¹, Thomas Wunderer², Stephan Schwaiger², Frank Lipski², and Ferdinand Scholz² — ¹Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany — ²Institut für Optoelektronik, Ulm University, 89069 Ulm, Germany

The strained growth of InGaN quantum films on polar c-plane GaN induces a strong piezoelectric field in the quantum well structures, which leads to a reduction of the emission energy and a spatial separation of electrons and holes in the QW. In order to reduce this piezoelectric fields for future efficient LEDs and LDs, InGaN quantum films are grown on semi- or nonpolar GaN surfaces. In our work we characterize the PL-spectra of InGaN quantum wells grown on semipolar {1-101} FACELO-samples by highly spatial resolved confocal laser scanning microscopy. The emission intensity and energy and their correlation are investigated for varying sample geometries. Furthermore we study the PL-spectra of InGaN layers with a thickness of about 25 nm grown on the same semipolar planes, which show an increased intensity compared to c-plane layers.