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HL: Fachverband Halbleiterphysik
HL 26: Focused Session: Novel nanowires electronic device concepts
HL 26.3: Topical Talk
Mittwoch, 25. März 2009, 10:45–11:15, HSZ 01
Polarity control of silicon nanowire transistors by electrostatic coupling to the Schottky contacts — Walter Michael Weber1, 2, Lutz Geelhaar4, Franz Kreupl3, Henning Riechert4, and •Paolo Lugli2 — 1Namlab gGmbH, Dresden, Germany — 2TU - Munich, Institute for Nanoelectronics, Munich, Germany — 3Qimonda AG, Neubiberg, Germany — 4Paul Drude Institute, Berlin, Germany
One of the challenges for implementing nanoscale semiconductors in future electronics is the accurate adjustment of the charge carrier concentration. We present an innovative method of creating p- and n-type FETs by employing intrinsic Si nanowires (NW) as the active region. This method does not require doping, but takes advantage of the inherent NW geometry and simply relies on the electrostatic control of the bands near the source- and drain- (S/D) contacts. The FETs are built from longitudinal NiSi2/Si/NiSi2 NW-heterostructures. The intruded metallic NiSi2 segments act as S/D -regions and introduce a Schottky barrier (SB) at their interface to the Si active region. Temperature activation measurements were used to reveal the relation between the applied electric fields and the charge carrier injection over the contacts. Accordingly, the transistor’s conductance was electrostatically steered by switching between thermionic emission and thermal assisted tunneling. This effect was employed to provide additional functionality to the transistors. By independently coupling each Schottky contact through separate top gates the device polarity could be controlled. This simple method enables the possibility to conceive complementary logic circuits without the use of doping.