Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 26: Focused Session: Novel nanowires electronic device concepts

HL 26.4: Topical Talk

Wednesday, March 25, 2009, 11:15–11:45, HSZ 01

Antimonide-based nanowire devices — •Lars-Erik Wernersson — Lund University, Sweden

III/V nanowires are attractive for implementation in various transistor configurations. For instance, InAs nanowire FETs have shown high transconductance and good subthreshold characteristics at 50 nm Lg [1]. Capacitance studies of the III/V MOS structure confirmed the transistor operation and provided values for the interface state density [2]. Also heterostruture barriers have been introduced to the channel to shift Vt [3].

The introduction of Antimon-based materials into the channel enables new functionalities for the nanowire transistors. GaSb nanowires have demonstrated good p-type conduction [4], while InSb nanowires allow the introduction of a very high mobility material [5]. Besides, InSb has a very large g-factor.

In this talk, the performance for short-channel InAs nanowire transistors and MOS capacitors will be discussed. Furthermore, experimental data for growth and electrical performance of GaSb and InSb nanowires will be presented and discussed.

[1] Thelander, et al IEEE Electron Device Lett 29, 206 (2008) [2] Roddaro, et al, Appl. Phys. Lett. 92, 253509 (2008); [3] Lind, et al Nano Lett., 6 (9), 1842 (2006) [4] Jeppsson, et al Journal of Crystal Growth23, 5119 (2008) [5] Caroff et al, Small 4, 878 (2008)