Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 26: Focused Session: Novel nanowires electronic device concepts

HL 26.5: Topical Talk

Mittwoch, 25. März 2009, 12:00–12:30, HSZ 01

Rf-characterization of III-V-Nanowire FET: Problems and Results — •Franz Tegude and Werner Prost — Univ. Duisburg-Essen

Nanowire fieldeffect transistors (NW-FET) are a straight forward continuation of downscaling in microelectronics. Further, because of their excellent transport properties, III-V-semiconductor materials have demonstrated record high frequency potential. This contribution addresses mainly, but not exclusively, InAs-n-channel MISFET prepared by a bottom-up approach employing the vapor-liquid-solid (VLS) epitaxial growth mode. Single NWs are processed yielding gate lengths in the micrometer and sub-micrometer range. Due to the nanometer scale two aspects become core problems with respect to FET device performance and characterisa-tion: parasitics, and mismatch to nearly exclusively used 50 Ohm rf measurement environment. Corner frequencies of about 15 GHz are presented, together with deembedding techniques to yield intrinsic and parasitic device parameters. In addition, rf characteristics are used for transport data evaluation, because standard methods like Hall characterisation is not immediately applicable to nanowire geometry.