Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 26: Focused Session: Novel nanowires electronic device concepts
HL 26.6: Topical Talk
Wednesday, March 25, 2009, 12:30–13:00, HSZ 01
Semiconductor nanowires as building blocks for quantum devices — •Thomas Schäpers1, Sergio Estevez Hernandez1, Gunnar Petersen1, Robert Frielinghaus1, Shima Alagha1, Christian Blömers1, Thomas Richter1, Raffaella Calarco1, Hans Lüth1, Michel Marso1, and Michael Indlekofer2 — 1Institute of Bio- and Nanosystems (IBN-1), JARA-Fundamentals of Future Information Technologies, Research Centre Jülich, 52425 Jülich, Germany — 2Informationstechnologie and Elektrotechnik, Wiesbaden University of Applied Sciences, Am Brückweg 26, 65428 Rüsselsheim, Germany
Semiconductor nanowires are versatile building blocks for the design of future electronic devices. Among the many possible materials, InN is particularly interesting because of its low energy band gap and its high surface conductivity. At low temperatures electron interference effects often play an important role in the transport characteristics of nanostructures. We studied the electronic transport of InN nanowires grown by plasma-assisted molecular beam epitaxy. The wires had a diameter ranging from 40 nm to 130 nm and a length of approximately 1 µm. Information on the phase-coherent transport was gained from the measurement of universal conductance fluctuations. It was found that at low temperatures phase-coherence is maintained in the complete wire structure, which is an important prerequisite for quantum devices. For nanowires comprising a very small diameter of approximately 40 nm pronounced flux-periodic oscillations in the magneto-conductance were observed. This effect is attributed to the formation of coherent circular quantum states on in the tube-like surface electron gas.