Dresden 2009 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 27: GaN: preparation and characterization I
HL 27.6: Talk
Wednesday, March 25, 2009, 11:00–11:15, BEY 81
Sub micrometer photoluminescence fluctuations in green light emitting InGaN/GaN quantum wells — •Julia Danhof1, Clemens Vierheilig1, Ulrich Theodor Schwarz1, Tobias Meyer2, Matthias Peter2, Berthold Hahn2, Markus Maier3, and Joachim Wagner3 — 1Institute for Experimental and Applied Physics, University of Regensburg, D-93040 — 2Osram Opto Semiconductors GmbH, Leibnizstr. 4, D-95055 — 3Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastrasse 72, D-79108
For green light emitting InGaN/GaN multiple quantum well samples a correlation of surface morphology and photoluminescence measurements has been established by comparing atomic force microscopy images with PL maps. Of main interest here are threading dislocation. Three samples with nominally the same quantum well (QW) structures but different substrates and threading dislocation densities are compared. Emitted wavelengths lay between 510 nm and 520 nm. Green light emitting QWs usually show a meandering structure on micro photoluminescence maps. For the sample the lowest dislocation density pinhole scans were performed in order to address the issue of charge carrier diffusion length within the meandering structure.