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HL: Fachverband Halbleiterphysik

HL 28: ZnO: preparation and characterization I

HL 28.11: Vortrag

Mittwoch, 25. März 2009, 12:30–12:45, BEY 118

Electrical properties of ZnMgO thin films grown by pulsed-laser deposition — •Kerstin Brachwitz, Holger von Wenckstern, Holger Hochmuth, Gisela Biehne, Christof Dietrich, Matthias Brandt, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Halbleiterphysik

We present electrical investigations of Mg_xZn_1−xO-semiconductor alloys, grown by pulsed-laser deposition (PLD). The Mg-content in the samples ranged from 4% to 50%. We grew nominally undoped and intensionally Al-doped (0.5%) MgZnO thin films and investigated their structural and electrical properties in dependence on the Mg-content. Furthermore we monitored changes of the samples properties after annealing for 30 minutes at different temperatures (500^∘C, 700^∘C and 900^∘C) in 700 mbar oxygen. High quality Schottky contacts were realized by reactive dc-sputtering of Pd. We investigated their properties by current-voltage- (IV) and capacitance-voltage-measurements (CV). Further on, we used these Schottky diodes to investigate defect states using depletion layer spectroscopy. Additionally we characterized the samples by X-ray-diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL). In conclusion we will show correlations between the structural and electronic properties for the as-grown and the annealed samples.