Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 28: ZnO: preparation and characterization I

HL 28.12: Vortrag

Mittwoch, 25. März 2009, 12:45–13:00, BEY 118

Nitrogen incorporation in ZnO thin films grown by radio frequency (RF) sputtering — •Sebastian Eisermann, Stefan Lautenschlaeger, Andreas Laufer, Angelika Polity, and Bruno K. Meyer — 1. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen

Bipolar conduction of electron and holes is mandatory for many electronic and opto-electronic applications of ZnO. Among the impurity atoms suited for acceptor formation nitrogen is the prime candidate. Controlling the incorporation without the formation of deep donors and acceptors and avoiding the deterioration of the materials quality is a main goal for homo- and heteroepitaxially grown ZnO films. We report on the sputter deposition of N-doped ZnO layers and will show by SIMS and Raman spectroscopy how the substrate type and substrate temperature influence the nitrogen incorporation.