Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 28: ZnO: preparation and characterization I
HL 28.3: Talk
Wednesday, March 25, 2009, 10:00–10:15, BEY 118
Growth of ZnO heterostructures in an ultra compact MBE system — •Marcel Ruth1,2 and Cedrik Meier2 — 1University of Duisburg-Essen, Institute of Experimental Physics, Lotharstr. 1, 47048 Duisburg — 2University of Paderborn, Group Nanophotonics and Nanomaterials, Warburger Str. 100, 33098 Paderborn
Due to its unique properties such as the large direct bandgap of 3.37eV and its high exciton binding energy, zinc oxide (ZnO) is a very promising semiconductor for optoelectronic and photonic applications even at room temperature. By adding cadmium (Cd) or magnesium (Mg) the bandgap can be tuned between 3.0eV and 4.0eV.
It has already been shown that plasma assisted molecular beam epitaxy (PA-MBE) is a very suitable technique for growing high-quality epilayers of ZnO. Especially for research issues small samples are often sufficient. By using ultra compact MBE-systems the running costs can be kept down. However, the special system geometry and the very compact design lead to high requirements on the system. It is not trivial that in such a system stoicometric and homogeneous growth conditions be achieved anyway. Furthermore, very high growth-rates can be obtained. By working in the zinc- (Zn) or oxygen-rich (O) regime completely different surface morphologies free of any metallic clusters are created.
We present a systematic study on the growth conditions in such a compact system. Especially, the determinaton of the flux will be discussed and the grown heterostructures will be characterised for their usability for nanophotonic devices.