Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 28: ZnO: preparation and characterization I
HL 28.4: Talk
Wednesday, March 25, 2009, 10:15–10:30, BEY 118
Growth of ZnO on Si by pulsed laser deposition under different oxygen partial pressures and temperatures — •Andreas Kraus, Helena Hilmer, Philipp Kühne, Stefan Schöche, Gerald Wagner, Christof Dietrich, Holger von Wenckstern, Matthias Brandt, Holger Hochmuth, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig
ZnO thin films were grown on Si (111) substrates by pulsed-laser deposition at different oxygen partial pressures and temperatures, respectively. They were characterized by X-ray diffraction (XRD), I-V measurements, spectroscopic ellipsometry and for selected samples by transmission electron microscopy (TEM). XRD measurements show that by increasing the oxygen partial pressure, the crystalline quality first increases and then decreases. Further, the crystalline quality improves with increasing substrate temperature. Ellipsometry measurements show that the growth rate first increases with increasing the oxygen partial pressure and then decreases similar to the structural quality. The resistivity obtained by I-V characteristics indicates that the higher the temperature the lower is the resistivity. TEM images show a presence of a large number of grain boundaries which are due to the amorphous SiOx layer on top of the Si substrate. These grain boundaries determine the electrical properties and consequently the I-V characteristics of the deposited ZnO layers.