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HL: Fachverband Halbleiterphysik

HL 28: ZnO: preparation and characterization I

HL 28.8: Vortrag

Mittwoch, 25. März 2009, 11:30–11:45, BEY 118

Homo- and heteroepitaxial growth of non-polar ZnO — Stefan Lautenschlaeger, •Sebastian Eisermann, Joachim Sann, Melanie Pinnisch, Andreas Laufer, and Bruno K. Meyer — 1st physics institute, JLU Gießen, Heinrich Buff Ring 16, 35392 Gießen

Polarization fields, parallel to the c-axis, strongly reduce the quantum efficiency in wurzite semiconductors. To eliminate these polarization fields epitaxial ZnO thin films have been grown on a-plane ZnO, r-plane sapphire and a-plane GaN templates. The grown epilayers have been investigated using low temperature Photoluminescence (PL), Atomic Force Microscopy (AFM), Secondary Ion Mass Spectrometry (SIMS), Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Raman spectroscopy. We compare the hetero- and the homoepitaxially grown samples with respect to their morphological and optical quality.